The millimeter-wave gallium nitride (GaN) technology created by Miro Micovic is perhaps the most significant new development of the past 20 years impacting semiconductor technologies for the radio-frequency and wireless industries. His patented innovations have changed the competitive landscape for monolithic microwave integrated circuits (MMICs) that operate at millimeter wave frequencies. He conceived a growth method that enabled the development of precisely engineered epitaxial structures that would prove to be essential for high-performance millimeter-wave devices. His creations helped convince the technical community that GaN technology could ultimately surpass existing state-of-the-art methods for millimeter-wave power amplification. He also demonstrated that high-frequency GaN technology is integral to robust, broadband, low-noise amplification. The high-performance millimeter-wave components made possible by Micovic’s work have enabled sensors integral to 94-GHz imaging radar, point-to-point communication for emerging 5G networks, and satellite communication links.
An IEEE Fellow, Micovic is an Engineering Fellow with Raytheon, Tucson, AZ, USA.