Kelin J. Kuhn
- IEEE Frederik Philips Award
Kelin J. Kuhn’s leadership in turning next-generation complimentary metal-oxide semiconductor (CMOS) technology into reality has been critical to enabling the continued miniaturization of transistors required for smaller but more powerful and efficient electronic devices. While working for Intel, Kuhn was responsible for navigating CMOS technology from minimum dimensions of 130 nm to 22 nm. Her involvement with introducing the high-k/metal-gate process was a breakthrough that enabled increased performance with lower power dissipation in electronic devices. She also made significant contributions to enabling the mass production of the TriGate transistor, which facilitates lower operating voltage for a substantial reduction in chip power consumption. These innovations are considered two of the most transformative changes in the history of silicon-based technology.
An IEEE Fellow, Kuhn is a professor with the Materials Science and Engineering Department at Cornell University, Ithaca, NY, USA.