Gurtej Singh Sandhu
- IEEE Andrew S. Grove Award
Gurtej Singh Sandhu’s pioneering achievements concerning patterning and materials integration have enabled the continuation of Moore’s Law for aggressive scaling of memory chips integral to consumer electronics products such as cell phones, digital cameras and solid-state drives for personal and cloud server computers. Sandhu initiated the development of atomic layer deposition high-k films for DRAM devices and helped drive cost-effective implementation starting with 90-nm node DRAM. Extreme device scaling was also made possible through his pitch-doubling process, which led to the first 3X-nm NAND flash memory. Sandhu’s method for constructing large-area straight-wall capacitors enabled the formation of double-sided capacitors that extended the scaling of important one-transistor, one-capacitor (1T1C) device technologies. His process for CVD Ti/TiN is still in use for making DRAM and NAND chips.
An IEEE Fellow, Sandhu is a Senior Fellow and director of Micron Technology, Inc., Boise, ID, USA.