Akira Toriumi

Akira Toriumi
Akira Toriumi

Biography

Akira Toriumi’s pioneering contributions to understanding advanced gate dielectrics and device physics are driving the continued miniaturization of components needed for current and future electronic devices. His early work on random dopant fluctuation-induced threshold voltage variation and its effect on device reliability addressed an important source of variation facing device design when trying to further scale power supply voltage. In the area of high-k silicon dielectrics, Toriumi demonstrated some of the thinnest reliable dielectrics to date to enable high-k gate stacks. He has also pioneered the investigation of using germanium as an alternative channel material for high-performance CMOS, which will be critical to providing the reduced power supply voltages needed for even smaller future technology generations.

An IEEE Senior member, Toriumi is a professor with the Department of Materials Engineering at the University of Tokyo, Tokyo, Japan.