Tim S. Böscke
Biography
Tim S. Böscke is a pioneer in the field of integrated ferroelectricity and its application. While doing research in dielectric materials and electrodes for DRAM capacitors, he performed an investigation of crystalline phase formation in doped nanometer-scale hafnium-oxide and zirconium-oxide films. His work with the nonlinear dielectric effects found in this material system revealed that it exhibits remanent polarization if prepared in a specific way, indicating a switchable electric dipole in the material. This discovery led to the first CMOS-compatible ferroelectric field transistor and, later, a range of CMOS-integrated device concepts, including nonvolatile data storage, neuromorphic computing, and reconfigurable logic, as well as nano-coolers, piezo-actuators and RF devices.
An IEEE Member, Böscke is a Director at ams OSRAM, Regensburg, Germany.
