Jesus A. del Alamo
- IEEE Cledo Brunetti Award
Jesús del Alamo has played a foundational role in establishing the viability of indium gallium arsenide (InGaAs) and gallium nitride (GaN) transistors for high-frequency communication, electrical power management, and digital logic applications. With InGaAs-based materials, his research group has pursued nanoscale high-electron mobility transistors (HEMTs) and metal-oxide-field-effect transistors (MOSFETs) for THz applications and achieved record performance in many dimensions. In the GaN heterostructure system, his research has focused on achieving fundamental understanding of electrical, environmental, and thermal reliability of HEMTs for radio-frequency and power electronics applications. Transistors based on del Alamo’s innovations have found use in applications ranging from smartphones to fiber-optic systems to wireless networks.
An IEEE Fellow, del Alamo is the Donner Professor and professor of electrical engineering with the Massachusetts Institute of Technology, Cambridge, MA, USA.