Guohan Hu
Biography
Daniel Worledge, Guohan Hu, and Gwan-Hyeob Koh developed the world’s first embedded Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology. Their work resulted in Samsung offering eMRAM at the 28 nm node and below for embedded non-volatile memory (eNVM) applications. Non-volatile memory is used to store information when the power is off and is already improving society by reducing energy usage in products sold today. Going forward, STT MRAM will be used to create smarter and more power-efficient products for a wide range of consumer, industrial, and automotive applications.
An IEEE Fellow, Hu is a Distinguished Research Scientist, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA and was the co-recipient of the 2025 IEEE Cledo Brunetti Award for "contributions to the development and commercialization of embedded Spin-Transfer-Torque Magnetoresistive Random-Access Memory (STT-MRAM) technology."
