Murray H. Woods
Murray H. Woods received the BSEE degree from Duke University in 1966, and the M.A., M.S.E., and Ph.D. degrees in Device Physics from Princeton University in 1968 and 1971, respectively.
He joined RCA Laboratories, Princeton, NJ in 1971 and worked on MNOS/SOS memory development and on transport, conduction and breakdown in insulators. He received two RCA Laboratories Awards for Outstanding Achievement. Dr. Woods has previously authored papers on high field conduction, ionic transport, internal photoemission, and hole trapping in Si02; impact ionization in Si Schottky barriers; MNOS degradation mechanisms; and double-dielectric instabilities. He holds several patents in these and related fields.
He joined Intel Corporation, Santa Clara, CA, in 1976 where he now manages the Process Reliability Department which is responsible for the study of fundamental failure mechanisms and their impact on new and existing technologies, as well as the reliability of all wafer fab processes.
Dr. Woods is a member of the IEEE as well as Sigma Xi and Eta Kappa Nu. He was General Chairman of the first IEEE Non-Volatile Seimconductor Memory Workshop and co-edited a special issue of the Transaction on Electron Devices based on those proceedings. He was also Technical Program Chairman for the 1980 IEEE International Reliability Physics Symposium and a member of Management and Program Committee for the IEEE Silicon Interface Specialists Conference.