Difference between revisions of "Burn Jeng Lin"

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[[Image:Jeng Lin.jpg|thumb|right]]
 
[[Image:Jeng Lin.jpg|thumb|right]]
  
Burn J. Lin is recognized as a technical leader in the semiconductor manufacturing industry and most responsible for 193-nm immersion lithography. In 2002, Dr. Lin proposed immersion lithography, which is a resolution-enhancement process that replaces the air gap between the lens and the wafer surface with a liquid medium, such as purified water. Through Dr. Lin’s perseverance in convincing the industry that a change was needed, immersion lithography was adopted, and manufacturing of 45-nm feature sizes and smaller have become possible.
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Burn J. Lin is recognized as a technical leader in the [[Semiconductors|semiconductor]] manufacturing industry and most responsible for 193-nm immersion lithography. In 2002, Dr. Lin proposed immersion lithography, which is a resolution-enhancement process that replaces the air gap between the lens and the wafer surface with a liquid medium, such as purified water. Through Dr. Lin’s perseverance in convincing the industry that a change was needed, immersion lithography was adopted, and manufacturing of 45-nm feature sizes and smaller have become possible.
  
 
He has continued the cause for immersion lithography with groundbreaking papers that have mapped out scaling laws for super-high numerical aperture immersion optics, and he has led the development of defect-reduction methods to address concerns regarding the technology. As a result, immersion lithography has quickly become a manufacturing technology in just a few years.
 
He has continued the cause for immersion lithography with groundbreaking papers that have mapped out scaling laws for super-high numerical aperture immersion optics, and he has led the development of defect-reduction methods to address concerns regarding the technology. As a result, immersion lithography has quickly become a manufacturing technology in just a few years.

Revision as of 19:31, 28 September 2011

Biography

Jeng Lin.jpg

Burn J. Lin is recognized as a technical leader in the semiconductor manufacturing industry and most responsible for 193-nm immersion lithography. In 2002, Dr. Lin proposed immersion lithography, which is a resolution-enhancement process that replaces the air gap between the lens and the wafer surface with a liquid medium, such as purified water. Through Dr. Lin’s perseverance in convincing the industry that a change was needed, immersion lithography was adopted, and manufacturing of 45-nm feature sizes and smaller have become possible.

He has continued the cause for immersion lithography with groundbreaking papers that have mapped out scaling laws for super-high numerical aperture immersion optics, and he has led the development of defect-reduction methods to address concerns regarding the technology. As a result, immersion lithography has quickly become a manufacturing technology in just a few years.

An IEEE Life Fellow, Dr. Lin is currently the senior director of the Nanopatterning Technology Division at TSMC, Ltd., the world’s largest silicon foundry.