Difference between revisions of "First-Hand:Start of epitaxial growth at Texas Instruments"

(The first work at Texas Instruments on silicon epitaxial R and D.)
 
Line 1: Line 1:
 
==  A beginning of Epitaxial Growth R and D at Texas Instruments  ==
 
==  A beginning of Epitaxial Growth R and D at Texas Instruments  ==
  
In the summer of 1960 I worked for Walter Runyan.&nbsp; Walt came in one day, while I was working on Si solar cell calibration and some photovoltaic devices as I recall, asked me to look into epitaxial growth.Ok.&nbsp; Three weeks later, Walt asked me what I was doing on silicon epy.&nbsp; Where is it being done and how do you spell it?&nbsp; Its on the back dock (of the new Material's Building).&nbsp; I went out later and found it in a converted broom closet.&nbsp; Walt asked me somewhat later if I had found the reactor.&nbsp; "Yes", I said, "but it can't be important; it is in a broom closet".&nbsp; "Jerry", he said, "you couldn't be more wrong".&nbsp; Our epi group later grew to 4 more engineers.&nbsp; I later had the second publication on the subject:<br>
+
In the summer of 1960 I worked for Walter Runyan.&nbsp; Walt came in one day, while I was working on Si solar cell calibration and some photovoltaic devices as I recall, asked me to look into epitaxial growth.Ok.&nbsp; Three weeks later, Walt asked me what I was doing on silicon epy.&nbsp; Where is it being done and how do you spell it?&nbsp; Its on the back dock (of the new Material's Building).&nbsp; I went out later and found it in a converted broom closet.&nbsp; Walt asked me somewhat later if I had found the reactor.&nbsp; "Yes", I said, "but it can't be important; it is in a broom closet".&nbsp; "Jerry", he said, "you couldn't be more wrong".&nbsp; Our epi group later grew to 4 more engineers.&nbsp; I later had the second publication on the subject:<br>  
 +
 
 +
 
  
<meta content="text/html; charset=utf-8" http-equiv="Content-Type"></meta><meta content="Word.Document" name="ProgId"></meta><meta content="Microsoft Word 10" name="Generator"></meta><meta content="Microsoft Word 10" name="Originator"></meta><link href="file:///C:\DOCUME~1\ADMINI~1\LOCALS~1\Temp\msohtml1\01\clip_filelist.xml" rel="File-List"></link><!--[if gte mso 9]><xml>
 
<w:WordDocument>
 
  <w:View>Normal</w:View>
 
  <w:Zoom>0</w:Zoom>
 
  <w:Compatibility>
 
  <w:BreakWrappedTables/>
 
  <w:SnapToGridInCell/>
 
  <w:WrapTextWithPunct/>
 
  <w:UseAsianBreakRules/>
 
  </w:Compatibility>
 
  <w:BrowserLevel>MicrosoftInternetExplorer4</w:BrowserLevel>
 
</w:WordDocument>
 
</xml><![endif]--><style>&lt;!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0in; margin-bottom:.0001pt; mso-pagination:none; font-size:10.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman"; layout-grid-mode:line;} @page Section1 {size:8.5in 11.0in; margin:1.0in 1.25in 1.0in 1.25in; mso-header-margin:.5in; mso-footer-margin:.5in; mso-paper-source:0;} div.Section1 {page:Section1;} --&gt; </style><!--[if gte mso 10]>
 
<style>
 
/* Style Definitions */
 
table.MsoNormalTable
 
{mso-style-name:"Table Normal";
 
mso-tstyle-rowband-size:0;
 
mso-tstyle-colband-size:0;
 
mso-style-noshow:yes;
 
mso-style-parent:"";
 
mso-padding-alt:0in 5.4pt 0in 5.4pt;
 
mso-para-margin:0in;
 
mso-para-margin-bottom:.0001pt;
 
mso-pagination:widow-orphan;
 
font-size:10.0pt;
 
font-family:"Times New Roman";}
 
</style>
 
<![endif]--><!--[if gte mso 9]><xml>
 
<o:shapedefaults v:ext="edit" spidmax="1026"/>
 
</xml><![endif]--><!--[if gte mso 9]><xml>
 
<o:shapelayout v:ext="edit">
 
  <o:idmap v:ext="edit" data="1"/>
 
</o:shapelayout></xml><![endif]-->
 
 
<span style="font-size: 12pt; letter-spacing: -0.15pt;">1962<span style="">&nbsp; </span>Kinetics of Silicon Crystal Growth from SiCl</span><sub><span style="font-size: 12pt; letter-spacing: -0.15pt;">4 </span></sub><span style="font-size: 12pt; letter-spacing: -0.15pt;">Deposition, Journal of The
 
<span style="font-size: 12pt; letter-spacing: -0.15pt;">1962<span style="">&nbsp; </span>Kinetics of Silicon Crystal Growth from SiCl</span><sub><span style="font-size: 12pt; letter-spacing: -0.15pt;">4 </span></sub><span style="font-size: 12pt; letter-spacing: -0.15pt;">Deposition, Journal of The
Electrochemical<span style=""> S</span>ociety, '''109,''' No. 12, December, 1962 pp1171-1175.&nbsp; And a chapter with Cameron Allen in an ASME conference book. <o:p></o:p></span>
+
Electrochemical<span style=""> S</span>ociety, '''109,''' No. 12, December, 1962 pp1171-1175.&nbsp; And a chapter with Cameron Allen in an ASME conference book.&nbsp;</span>  
  
[[Category:Engineered_materials_%26_dielectrics]]
+
[[Category:Engineered_materials_&_dielectrics|Category:Engineered_materials_&amp;_dielectrics]] [[Category:Materials]] [[Category:Films]]
[[Category:Materials]]
 
[[Category:Films]]
 

Revision as of 15:57, 5 January 2009

 A beginning of Epitaxial Growth R and D at Texas Instruments

In the summer of 1960 I worked for Walter Runyan.  Walt came in one day, while I was working on Si solar cell calibration and some photovoltaic devices as I recall, asked me to look into epitaxial growth.Ok.  Three weeks later, Walt asked me what I was doing on silicon epy.  Where is it being done and how do you spell it?  Its on the back dock (of the new Material's Building).  I went out later and found it in a converted broom closet.  Walt asked me somewhat later if I had found the reactor.  "Yes", I said, "but it can't be important; it is in a broom closet".  "Jerry", he said, "you couldn't be more wrong".  Our epi group later grew to 4 more engineers.  I later had the second publication on the subject:


1962  Kinetics of Silicon Crystal Growth from SiCl4 Deposition, Journal of The Electrochemical Society, 109, No. 12, December, 1962 pp1171-1175.  And a chapter with Cameron Allen in an ASME conference book.