Difference between revisions of "First-Hand:Start of epitaxial growth at Texas Instruments"

(The first work at Texas Instruments on silicon epitaxial R and D.)
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Revision as of 22:16, 30 December 2008

 A beginning of Epitaxial Growth R and D at Texas Instruments

In the summer of 1960 I worked for Walter Runyan.  Walt came in one day, while I was working on Si solar cell calibration and some photovoltaic devices as I recall, asked me to look into epitaxial growth.Ok.  Three weeks later, Walt asked me what I was doing on silicon epy.  Where is it being done and how do you spell it?  Its on the back dock (of the new Material's Building).  I went out later and found it in a converted broom closet.  Walt asked me somewhat later if I had found the reactor.  "Yes", I said, "but it can't be important; it is in a broom closet".  "Jerry", he said, "you couldn't be more wrong".  Our epi group later grew to 4 more engineers.  I later had the second publication on the subject:

<meta content="text/html; charset=utf-8" http-equiv="Content-Type"></meta><meta content="Word.Document" name="ProgId"></meta><meta content="Microsoft Word 10" name="Generator"></meta><meta content="Microsoft Word 10" name="Originator"></meta><link href="file:///C:\DOCUME~1\ADMINI~1\LOCALS~1\Temp\msohtml1\01\clip_filelist.xml" rel="File-List"></link><style><!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-parent:""; margin:0in; margin-bottom:.0001pt; mso-pagination:none; font-size:10.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman"; layout-grid-mode:line;} @page Section1 {size:8.5in 11.0in; margin:1.0in 1.25in 1.0in 1.25in; mso-header-margin:.5in; mso-footer-margin:.5in; mso-paper-source:0;} div.Section1 {page:Section1;} --> </style> 1962  Kinetics of Silicon Crystal Growth from SiCl4 Deposition, Journal of The Electrochemical Society, 109, No. 12, December, 1962 pp1171-1175.  And a chapter with Cameron Allen in an ASME conference book. <o:p></o:p>