Pallab Bhattacharya: Difference between revisions
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{{Biography | {{Biography | ||
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|Associated organizations=University of Michigan | |||
|Fields of study=Lasers | |||
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A pioneer of near-infrared and visible quantum dot (QD) laser technology, Pallab Bhattacharya continues to be a leader in developing high-performance lasers impacting optical communication and medical and mobile projector applications. Prof. Bhattacharya was one of the first to demonstrate a room-temperature QD laser in 1996. He then demonstrated the tunnel injection method to enable QD lasers with high-speed modulation and high temperature stability. In 2011, he demonstrated the first nitride-based visible QD lasers with lower threshold than equivalent quantum well lasers. His 630-nm red QD laser is the longest ever emission wavelength achieved with nitride materials. His work on incorporating QD lasers on silicon substrates has important implications for realizing on-chip optical interconnections and signal processing. | A pioneer of near-infrared and visible quantum dot (QD) laser technology, Pallab Bhattacharya continues to be a leader in developing high-performance lasers impacting optical communication and medical and mobile projector applications. Prof. Bhattacharya was one of the first to demonstrate a room-temperature QD laser in 1996. He then demonstrated the tunnel injection method to enable QD lasers with high-speed modulation and high temperature stability. In 2011, he demonstrated the first nitride-based visible QD lasers with lower threshold than equivalent quantum well lasers. His 630-nm red QD laser is the longest ever emission wavelength achieved with nitride materials. His work on incorporating QD lasers on silicon substrates has important implications for realizing on-chip optical interconnections and signal processing. | ||
Revision as of 18:14, 11 February 2016
Biography
A pioneer of near-infrared and visible quantum dot (QD) laser technology, Pallab Bhattacharya continues to be a leader in developing high-performance lasers impacting optical communication and medical and mobile projector applications. Prof. Bhattacharya was one of the first to demonstrate a room-temperature QD laser in 1996. He then demonstrated the tunnel injection method to enable QD lasers with high-speed modulation and high temperature stability. In 2011, he demonstrated the first nitride-based visible QD lasers with lower threshold than equivalent quantum well lasers. His 630-nm red QD laser is the longest ever emission wavelength achieved with nitride materials. His work on incorporating QD lasers on silicon substrates has important implications for realizing on-chip optical interconnections and signal processing.
An IEEE Life Fellow, Dr. Bhattacharya is a professor of electrical engineering and computer science with the University of Michigan, Ann Arbor, MI, USA.