Noah Hershkowitz: Difference between revisions
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{{Biography | {{Biography | ||
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|Associated organizations=University of Wisconsin | |||
|Fields of study=Plasma | |||
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For over 40 years, Noah Hershkowitz’s research has broadened the understanding of the fundamental properties of plasma. His work has covered a wide range of plasma phenomena including low-temperature plasmas, semiconductor fabricating plasmas, fusion plasmas, and space plasmas. His groundbreaking contributions to understanding solitons, sheaths, and presheaths have impacted semiconductor etching, as the plasma sheath plays a major role in the linear acceleration of ions that results in the small features of modern microelectronic circuits. His pioneering work on emissive probes resulted in the development of a new technique for determining plasma potential by analyzing emissive probe emitted current. In 2002 he was the first to measure plasma potential throughout the presheath and sheath at a boundary in a weakly collisional plasma. He has supervised 56 Ph.D.'s. | For over 40 years, Noah Hershkowitz’s research has broadened the understanding of the fundamental properties of plasma. His work has covered a wide range of plasma phenomena including low-temperature plasmas, semiconductor fabricating plasmas, fusion plasmas, and space plasmas. His groundbreaking contributions to understanding solitons, sheaths, and presheaths have impacted semiconductor etching, as the plasma sheath plays a major role in the linear acceleration of ions that results in the small features of modern microelectronic circuits. His pioneering work on emissive probes resulted in the development of a new technique for determining plasma potential by analyzing emissive probe emitted current. In 2002 he was the first to measure plasma potential throughout the presheath and sheath at a boundary in a weakly collisional plasma. He has supervised 56 Ph.D.'s. | ||
Latest revision as of 19:57, 9 February 2016
Biography
For over 40 years, Noah Hershkowitz’s research has broadened the understanding of the fundamental properties of plasma. His work has covered a wide range of plasma phenomena including low-temperature plasmas, semiconductor fabricating plasmas, fusion plasmas, and space plasmas. His groundbreaking contributions to understanding solitons, sheaths, and presheaths have impacted semiconductor etching, as the plasma sheath plays a major role in the linear acceleration of ions that results in the small features of modern microelectronic circuits. His pioneering work on emissive probes resulted in the development of a new technique for determining plasma potential by analyzing emissive probe emitted current. In 2002 he was the first to measure plasma potential throughout the presheath and sheath at a boundary in a weakly collisional plasma. He has supervised 56 Ph.D.'s.
An IEEE Life Fellow, Dr. Hershkowitz is the Irving Languir Professor Emeritus at the University of Wisconsin, Madison, WI, USA.