Peter M. Asbeck's work has greatly advanced the physics, fabrication and applications of heterojunction bipolar transistors (HBTs). As a result of his focused efforts, gallium arsenide HBT technology has evolved into a mainstream microwave device technology that is now widely used in high-speed optical fiber links for driving lasers and modulators. Approximately half of the 450 million cellular phones produced annually employ technology pioneered by Dr. Asbeck.
A Fellow of the IEEE, he also is a distinguished lecturer for the IEEE Electron Devices and IEEE Microwave Theory and Techniques Societies. He holds 11 patents and has contributed to more than 200 research publications. His honors include being named Engineer of the Year from Rockwell International Science Center. He is a professor at the University of California at San Diego.