Michael S. Adler, 2003, contributed to the invention and development of new power semiconductors (the IGBT, the power MOSFET, and the power IC) when he worked at GE.
Dr. Michael Adler graduated from MIT in 1971 as a PhD in the area of solid state physics.
He began work at General Electric in 1971. In his early career at GE, Adler was involved with the invention and development of a new generation of power semiconductors including the IGBT, the power MOSFET, and the power IC. From 1985 until his retirement in 2000, he headed a laboratory of 150 people to develop power electronics, control systems, and high-density electronic assemblies.
After his retirement from GE, Adler served as Vice President of Technology of Mechanical Technology Inc. (MTI), and Research Professor at Rensselaer Polytechnic Institute. With these groups he helped develop micro fuel cells for cell phone use and worked on advanced power semiconductors.