Hideo Ohno’s vision and leadership in integrating semiconductor technology with spin-transport electronics has built the foundation for the field of spintronics and enabled advanced magnetic-based memory and logic circuits at the nanometer scale. Dr. Ohno’s research on synthesizing a new class of ferromagnetic semiconductors during the late 1980s led to new device concepts that combined spin and charge degrees of freedom and demonstrated control of ferromagnetism by electric fields. He further developed these ferromagnetic semiconductors to demonstrate electrical injection of spin-polarized circuits in ferromagnetic heterostructures (1999), control of ferromagnetic phase transition using electric fields (2000), and electric control of magnetization direction (2008). Dr. Ohno also developed a nonvolatile magnetic tunnel junction (MTJ) that demonstrated a world-record tunnel magnetoresistance of over 600%. In 2010, he developed a perpendicular anisotropy MTJ capable of integration at dimensions as small as 40 nm.
An IEEE Member, Dr. Ohno is currently a professor at the Laboratory for Nanoelectronics and Spintronics within the Research Institute of Electrical Communication at Tohoku University in Sendai, Japan, where he also directs the Center for Spintronics Integrated Systems.