Conrad Hoeppner

From ETHW

Conrad Hoeppner
Birthdate
1918/03/12
Birthplace
Spooner, WI, USA

Biography

Conrad H. Hoeppner (IRE Senior Member, 1947, and Fellow, 1958) was born in Spooner, Wisconsin, on 12 March 1918. In 1962, he held more than forty patents. He received the B.S.E.E. degree, in 1939, and the M.S.E.E degree in 1940, from the University of Wisconsin, Madison. He did graduate work at the Massachusetts Institute of Technology, and received the professional E.E. degree, in 1947, from the University of Wisconsin.

Thereafter, Hoeppner was employed by the U.S. Naval Research Laboratories, Washington, D.C. He held many other posts, including Director of the Electronics Laboratory, Glenn L. Martin Company, Baltimore, Maryland; Director of the Engineering Products Department, Raytheon Manufacturing Company, Waltham, Massachusetts; Vice President and Director of the General Electronic Laboratories; Manager of the Electronics Division of the W.L. Maxson Corporation, New York, N.Y.; Manager of the Development Division, Stavid Engineering, Plainfield, New Jersey; and Chief Scientist and Director of Research at Radiation, Inc., Melbourne, Florida. In 1962, he was President of the Electronics Corporation, Melbourne, Florida.

Hoeppner was a member of Sigma Xi, Pi Mu Epsilon, Phi Kappa Phi, Phi Eta Sigma, and Eta Kappa Nu. He was also a Fellow of Tau Beta Pi and the Wisconsin Alumni Research Institute. He also served with the Research and Development Board of the Department of Defense.